VESCO-NM was founded in 2009 by Dr. Abdel-Rahman EL-Emawy. Dr. El-Emawy earned his Ph.D. in 1996 from Colorado State University. The title of his dissertation was the growth of II/VI materials and related alloys by MBE. Dr. El-Emawy joined the Center for High Technology Materials (CHTM), University of New Mexico (UNM) in 2000 as a research professor.

After joining CHTM, he focused his research in the areas of MOCVD growth of InAs/GaAs quantum dots and dilute nitrides (GaInNAs, GaNAs). He then led MBE programs for the growth of InAs/GaAs quantum dots and spintronic materials GaMnAs for spin injection. Dr. El-Emawy published pioneer work for the growth P-type ZnSe, 1.3 µm GaInNAs and InAs/GaAs quantum dots, mid-infrared InNAs, and GaMnAs. He has over 50 publications in the field of semiconductor materials growth and development, including Silicon, III/V’s, and II/VI’s materials. He has extensive experience teaching electronics, optoelectronics, and semiconductor materials and devices.

Dr. El-Emawy spent his early career as an aircraft avionics and simulators engineer – maintaining and operating navigation, communication, and radar systems for aircrafts. He modified the operation of radar systems and mission generation files of some aircrafts. He led a program for the development of GaAs based BiFET using MOCVD for the telecommunication industry. He founded VESCO-NM after many years of experience in the field of MBE and MOCVD growth. Dr. El-Emawy is the president and founder of VESCO-NM, he oversees all VESCO-NM operations.

Since inception, VESCO-NM has provided services and products to hundreds of customers all over the world encompassing most existing MBE and MOCVD systems and sources. Our objective is to provide our customers with smart designs and the highest quality products, as well as excellent technical services. We continue to improve our unique products to best fit our customers’ needs and specifications.